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october 2011 doc id 17931 rev 2 1/13 13 STF11N65K3 n-channel 650 v, 0.765 ? , 11 a, to-220fp supermesh3? power mosfet features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitances improved diode reverse recovery characteristics zener-protected applications switching applications description this device is an n-channel zener-protected supermesh3? power mosfet developed using stmicroelectronics' supermesh? technology, achieved through optimization of st's well established strip-based powermesh? layout. in addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt ca pability for the most demanding applications. figure 1. internal schematic diagram type v dss r ds(on) max i d p tot STF11N65K3 650 v < 0.85 ? 11 a 35 w to-220fp 1 2 3 d(2) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging STF11N65K3 11n65k3 to-220fp tube www.st.com obsolete product(s) - obsolete product(s)
contents STF11N65K3 2/13 doc id 17931 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 obsolete product(s) - obsolete product(s)
STF11N65K3 electrical ratings doc id 17931 rev 2 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v dss drain source voltage (v gs =0) 650 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 11 a i d drain current (continuous) at t c = 100 c 6.3 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 40 a p tot total dissipation at t c = 25 c 35 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 7.2 a e as single pulse avalanche energy (2) 2. starting t j = 25 c, i d = i ar , v dd = 50 v 212 mj derating factor 0.28 w/c dv/dt (3) 3. i sd 11 a, di/dt 400 a/s, v dd = 80% v (br)dss , v ds peak < v (br)dss peak diode recovery voltage slope 12 v/ns v esd(g-s) g-s esd (hbm c=100 pf, r=1.5 k ? ) 2500 v v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 3.57 c/w rt hj-amb thermal resistance juncti on-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c obsolete product(s) - obsolete product(s)
electrical characteristics STF11N65K3 4/13 doc id 17931 rev 2 2 electrical characteristics (tcase = 25 c unless otherwise specified). table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage ( v gs = 0) i d = 1 ma 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 3.6 a 0.765 0.85 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1180 125 14 - pf pf pf c oss eq. equivalent output capacitance v ds = 0 to 520 v, v gs = 0 - 77 - pf r g intrinsic gate resistnce f=1 mhz open drain - 3 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 7.2 a, v gs = 10 v (see figure 16 ) - 42 7.4 23 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 310 v, i d = 3.5 a, r g = 4.7 ?, v gs = 10 v (see figure 15 ) - 14.5 14 44 35 - ns ns ns ns obsolete product(s) - obsolete product(s)
STF11N65K3 electrical characteristics doc id 17931 rev 2 5/13 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make th em safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 7.2 28.8 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 7 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7 a, di/dt = 100a/s v dd = 60 v (see figure 20 ) - 320 2 13 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 20 ) - 410 2.9 14 ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1 ma (open drain) 30 - - v obsolete product(s) - obsolete product(s)
electrical characteristics STF11N65K3 6/13 doc id 17931 rev 2 2.1 electrical characteristics (c urves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized bv dss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 922v1 i d 6 4 2 0 0 10 v d s (v) 20 (a) 8 10 5v 6v 7v v g s =10v 12 14 16 1 8 am0 3 92 3 v1 i d 3 2 1 0 1 4 v g s (v) 8 (a) 2 6 4 5 3 5 7 9 6 7 8 9 10 11 12 v d s =25v am0 3 924v1 bv d ss -75 -25 t j (c) (norm) -50 75 25 50 100 0.90 0.95 1.00 1.05 1.10 125 150 0 i d = 1ma am0 3 925v1 r d s (on) 0.75 0.70 0.65 0.60 0 2 i d (a) ( ? ) 1 3 0. 8 0 0. 8 5 0.90 0.95 4 5 6 7 am0 3 926v1 v g s = 10v obsolete product(s) - obsolete product(s)
STF11N65K3 electrical characteristics doc id 17931 rev 2 7/13 figure 8. output capacitance stored energy figure 9. capacitance variations figure 10. gate charge vs gate-source voltage figure 11. normalized on resistance vs temperature figure 12. normalized gate threshold voltage vs temperature figure 13. maximum avalanche energy vs temperature e o ss 3 2 1 0 0 100 v d s (v) ( j) 400 4 200 3 00 5 6 500 600 7 8 am0 3 929v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am0 3 92 8 v1 v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =520v i d =7a 50 12 3 00 200 100 0 400 500 v d s v g s am0 3 927v1 r d s (on) 2.0 1.5 1.0 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 125 150 2.5 0.0 am0 3 9 3 1v1 v d s = 10v i d = 3 .6a v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 125 150 am0 3 9 3 0v1 i d = 100 a e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 20 40 60 8 0 120 140 100 120 140 160 1 8 0 200 220 i d =7.2 a v dd =50 v am0 3 9 33 v1 obsolete product(s) - obsolete product(s)
electrical characteristics STF11N65K3 8/13 doc id 17931 rev 2 figure 14. source-drain diode forward characteristics v s d 0 2 i s d (a) (v) 1 5 3 4 0.4 0.5 0.6 0.7 0. 8 0.9 t j =-50c t j =150c t j =25c 8 6 7 0. 3 am0 3 9 3 2v1 obsolete product(s) - obsolete product(s)
STF11N65K3 test circuits doc id 17931 rev 2 9/13 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive wavefor m figure 20. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s obsolete product(s) - obsolete product(s)
package mechanical data STF11N65K3 10/13 doc id 17931 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. obsolete product(s) - obsolete product(s)
STF11N65K3 package mechanical data doc id 17931 rev 2 11/13 figure 21. to-220fp drawing table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1 obsolete product(s) - obsolete product(s)
revision history STF11N65K3 12/13 doc id 17931 rev 2 5 revision history table 10. document revision history date revision changes 10-sep-2010 1 first release 03-oct-2011 2 updated figure 6: normalized bv dss vs temperature , figure 7: static drain-source on resistance , figure 10: gate charge vs gate- source voltage , figure 11: normalized on resistance vs temperature , figure 12: normalized gate threshold voltage vs temperature . minor text changes. obsolete product(s) - obsolete product(s)
STF11N65K3 doc id 17931 rev 2 13/13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com obsolete product(s) - obsolete product(s)

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